Mohamed Boutchich

Laboratoire

Génie Électrique et Électronique de PariS

Publications (74)

Article dans une revue 30/09/2020

Imaging the defect distribution in 2D hexagonal boron nitride by tracing photogenerated electron dynamics

Keiki Fukumoto , Yuta Suzuki , Songyan Hou , Muhammad Danang Birowosuto , Alexandre Jaffré , David Alamarguy , Edwin Hang Tong Teo , Hong Wang , Beng Kang Tay , Mohamed Boutchich , Mohamed Boutchich

Article dans une revue 28/06/2020

Integration of fluorographene trapping medium in MoS2-based nonvolatile memory device

Kai Ping Chang , Haneen Abushammala , Mamina Sahoo , Alexandre Jaffré , David Alamarguy , Yu Jiang , Mohamed Boutchich , Chao-Sung Lai , Mohamed Boutchich

Article dans une revue 15/05/2020

Electronic and Thermoelectric Properties of Graphene on 4H-SiC (0001) Nanofacets Functionalized with F4-TCNQ

Chanan Euaruksakul , Hideki Nakajima , Arunothai Rattanachata , Muhammad y Hanna , Ahmad. R. T. Nugraha , Mohamed Boutchich , Mohamed Boutchich

Article dans une revue 28/11/2019

Graphene/fluorographene heterostructure for nano ribbon transistor channel

Kai-Ping Chang , Kuan-I Ho , Mohamed Boutchich , Julien Chaste , Hakim Arezki , Chao-Sung Lai , Mohamed Boutchich

Communication dans un congrès 24/10/2019

Oral presentation - Work function mapping of functionalized graphene grown on 4H-SiC (0001) substrate

Mohamed Boutchich , Mohamed Boutchich

Communication dans un congrès 17/06/2019

Probing of the electronic properties of graphene and 2d analogues: ARPES & PEEM on graphene-based heterostructures

Mohamed Boutchich , Mohamed Boutchich

Article dans une revue 01/05/2018

Large local lattice expansion in graphene adlayers grown on copper

Chaoyu Chen , José Avila , Hakim Arezki , van Luan Nguyen , Jiahong Shen , Marcin Mucha-Kruczyński , Fei Yao , Mohamed Boutchich , Yue Chen , Young Hee Lee , Maria Asensio , Mohamed Boutchich

Article dans une revue 01/11/2017

Ultrafast electron dynamics in twisted graphene by femtosecond photoemission electron microscopy

Keiki Fukumoto , Mohamed Boutchich , Hakim Arezki , Ken Sakurai , Daniela Di Felice , Yannick J. Dappe , Ken Onda , Shin-Ya Koshihara , Mohamed Boutchich

Article dans une revue 01/09/2017

Radiative recombination coefficient in crystalline silicon at low temperatures < 77 K by combined photoluminescence measurements

Rudolf Brüggemann , Ming Xu , José Alvarez , Mohamed Boutchich , Jean-Paul Kleider , Jose Alvarez , Mohamed Boutchich , Jean-Paul Kleider

Article dans une revue 01/06/2017

Temperature dependence of the radiative recombination coefficient in crystalline silicon by spectral and modulated photoluminescence

Rudolf Brüggemann , Ming Xu , José Alvarez , Mohamed Boutchich , Jean-Paul Kleider , Jose Alvarez , Mohamed Boutchich , Jean-Paul Kleider